Defect-Oriented Degradations in Recent VLSIs: Random Telegraph Noise, Bias Temperature Instability and Total Ionizing Dose
نویسنده
چکیده
This paper introduces Random Telegraph Noise (RTN) and Bias Temperature Instability (BTI) and Total Ionizing Dose (TID). They are correlated and caused from the same type of defects in gate and field oxides.
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